20 1 2 - 1 1 - 2 8 page 1 bsp295 rev 2. 3 sipmos ? small-signal-transistor product summary v ds 60 v r ds(on) 0.3 i d 1.8 a feature n-channel enhancement mode d v /d t rated pg-sot223 vps05163 1 2 3 4 marking bsp295 type package tape and reel information bsp295 pg-sot223 h 6327: 1000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 1.8 1.44 a pulsed drain current t a =25c i d puls 7.2 reverse diode d v /d t i s =1.8a, v ds =40v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v esd class (jesd22-a114-hbm) 1b (>500v, <1000v) power dissipation t a =25c p tot 1.8 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 ? pb-free lead plating; rohs compliant x qualified according to aec q101 packaging marking non dry ? halogen-free?according?to?iec61249-2-21
bsp295 rev 2. 3 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point r thjs - 15 25 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - 80 48 115 70 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =250a v (br)dss 60 - - v gate threshold voltage, v gs = v ds i d =400a v gs(th) 0.8 1.1 1.8 zero gate voltage drain current v ds =60v, v gs =0, t j =25c v ds =60v, v gs =0, t j =150c i dss - - - 8 0.1 50 a gate-source leakage current v gs =20v, v ds =0 i gss - 1 10 na drain-source on-state resistance v gs =10v, i d =1.8a v gs =4.5v, i d =1.8a r ds(on) - - 0.22 0.39 0.3 0.5 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 20 1 2 - 1 1 - 2 8 page 2
bsp295 rev 2. 3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =1.44a 0.8 1.7 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 295 368 pf output capacitance c oss - 95 118 reverse transfer capacitance c rss - 45 67 turn-on delay time t d(on) v dd =15v, v gs =4.5v, i d =1.44 a, r g =15 - 5.4 8.1 ns rise time t r - 9.9 15 turn-off delay time t d(off) - 27 41 fall time t f - 19 28 gate charge characteristics gate to source charge q gs v dd =24v, i d =1.8a - 0.9 1.1 nc gate to drain charge q gd - 5.6 8.4 gate charge total q g v dd =24v, i d =1.8a, v gs =0 to 10v - 14 17 gate plateau voltage v (plateau) v dd =24v, i d = 1.8 a - 3.1 3.8 v reverse diode inverse diode continuous forward current i s t a =25c - - 1.8 a inv. diode direct current, pulsed i sm - - 7.2 inverse diode forward voltage v sd v gs =0, i f = i s - 0.84 1.3 v reverse recovery time t rr v r =25v, i f = l s , d i f /d t =100a/s - 36 45 ns reverse recovery charge q rr - 38 48 nc 20 1 2 - 1 1 - 2 8 page 3
bsp295 rev 2. 3 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 w 1.9 bsp295 p tot 2 drain current i d = f ( t a ) parameter: v gs 10 v 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 a 1.9 bsp295 i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 0 10 1 10 2 v v ds -2 10 -1 10 0 10 1 10 a bsp295 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 150.0 s 4 transient thermal impedance z thja = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w bsp295 z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 20 1 2 - 1 1 - 2 8 page 4
bsp295 rev 2. 3 5 typ. output characteristic i d = f ( v ds ) parameter: t j = 25 c, v gs 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 a 3.6 i d 3v 4.2v 3.8v 3.4v 2.8v 2.4v 5v 6v 7v 10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j = 25 c, v gs 0 0.6 1.2 1.8 2.4 a 3.6 i d 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.8 r ds(on) 2.4v 2.8v 3v 3.4v 3.8v 4.2v 5v 6v 7v 10v 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t j = 25 c 0 0.5 1 1.5 2 2.5 3 v 4 v gs 0 0.5 1 1.5 a 2.5 i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j = 25 c 0 0.6 1.2 1.8 2.4 v 3.6 i d 0 0.5 1 1.5 s 2.5 g fs 20 1 2 - 1 1 - 2 8 page 5
bsp295 rev 2. 3 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 1.8 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.75 bsp295 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds ; i d = 1 ma -60 -20 20 60 100 c 160 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v 2.2 v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz, t j = 25 c 0 5 10 15 20 v 30 v ds 1 10 2 10 3 10 pf c crss coss ciss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -2 10 -1 10 0 10 1 10 a bsp295 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 20 1 2 - 1 1 - 2 8 page 6
bsp295 rev 2. 3 13 typ. avalanche energy e as = f ( t j ) par.: i d = 3.9 a, v dd = 25 v, r gs = 25 20 40 60 80 100 120 c 160 t j 0 10 20 30 40 mj 60 e as 14 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 1.8 a pulsed, t j = 25 c 0 4 8 12 16 nc 24 q g 0 2 4 6 8 10 12 v 16 bsp295 v gs 0.2 v ds max 0.5 v ds max 0.8 v ds max 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 45 46 47 48 49 50 51 52 53 54 55 56 57 v 60 bsp295 v (br)dss 20 1 2 - 1 1 - 2 8 page 7
bsp295 rev 2. 3 20 1 2 - 1 1 - 2 8 page 8
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